ZINC ION-IMPLANTATION OF SULFUR-DOPED GAP

被引：8

作者：

HEMENGER, PM ^{[1
]}

DOBBS, BC ^{[1
]}

机构：

[1] USAF,MAT LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 08期

关键词：

D O I：

10.1063/1.1654959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：462 / 464

页数：3

共 22 条

[1] SOLUBILITY AND DIFFUSION OF ZINC IN GALLIUM PHOSPHIDE [J].

ALLISON, HW .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :231-&

[2]

Carter G., 1972, Radiation Effects, V16, P107, DOI 10.1080/00337577208232028

[3]

CARTER G, 1972, RADIAT EFF, V15, P143

[4] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].

CASEY, HC ;

ERMANIS, F ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+

[5] SOLUBILITIES + DISTRIBUTION COEFFICIENTS OF ZN IN GAAS + GAP [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (01) :23-&

[6] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :374-&

[7] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&

[8]

FAULKNER KR, 1971, ION IMPLANTATION SEM

[9]

FELDMAN LC, 1971, ION IMPLANTATION

[10] MEASUREMENT OF HIGH-RESISTIVITY SEMICONDUCTORS USING VANDERPAUW METHOD [J].

HEMENGER, PM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) :698-700

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