THICKNESS DISTRIBUTION IN THIN-FILM

被引:4
作者
HATTORI, T [1 ]
机构
[1] MUSASHI INST TECHNOL,FAC ENGN,DEPT ELECT ENGN,SETAGAYA KU,TOKYO,JAPAN
关键词
D O I
10.1143/JJAP.16.635
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:635 / 636
页数:2
相关论文
共 6 条
  • [1] SURFACE INVESTIGATION OF SOLIDS BY STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS)
    BENNINGHOVEN, A
    [J]. SURFACE SCIENCE, 1973, 35 (01) : 427 - 457
  • [2] ANGULAR-DEPENDENCE OF X-RAY PHOTOELECTRONS
    BRUNNER, J
    ZOGG, H
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) : 911 - 920
  • [3] ELECTRON ESCAPE DEPTH IN SILICON
    KLASSON, M
    BERNDTSSON, A
    HEDMAN, J
    NILSSON, R
    NYHOLM, R
    NORDLING, C
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 3 (06) : 427 - 434
  • [4] ELECTRON ATTENUATION LENGTHS FOR FREE-ELECTRON-LIKE METALS
    PENN, DR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 221 - 223
  • [5] SUNJIC M, 1974, JPN J APPL PHYS, P753
  • [6] WEHNER GK, 1974, JPN J APPL PHYS, P495