MECHANICAL LIGHT-MODULATOR FABRICATED ON A SILICON CHIP USING SIMOX TECHNOLOGY

被引：4

作者：

WISZNIEWSKI, WR ^{[1
]}

COLLINS, RE ^{[1
]}

PAILTHOORPE, BA ^{[1
]}

机构：

[1] UNIV SYDNEY,DEPT APPL PHYS,SYDNEY,NSW 2006,AUSTRALIA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 43卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(93)00688-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a light modulator fabricated on a silicon chip using SIMOX (separation by implantation of oxygen) technology. The modular consists of a double supported beam made of layers of silicon nitride and mono-crystalline silicon, separated from a silicon substrate by the air gap. The voltage applied between the beam and the substrate bends the beam and the thickness of the gap is reduced. This alters the interference pattern of light illuminating the modulator. Based on this principle, light reflected by the device is modulated with the a.c. voltage signal which is driving the modulator beam. The modulator, with a beam 100 mum long, 5 mum wide and a total thickness of 0.43 mum, shows a 50% change in the reflected light intensity of the wavelength 514 nm, when biased with 20 V d.c. The fundamental resonant frequency of the modulator is 2.5 MHz.

引用

页码：170 / 174

页数：5