FORMATION OF ETCH-STOP STRUCTURES UTILIZING ION-BEAM SYNTHESIZED BURIED OXIDE AND NITRIDE LAYERS IN SILICON

被引：11

作者：

STOEV, IG

YANKOV, RA

JEYNES, C

机构：

[1] BULGARIAN ACAD SCI,INST ELECTR,BU-1784 SOFIA,BULGARIA

[2] UNIV SURREY,DEPT ELECT & ELECTR ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

SENSORS AND ACTUATORS | 1989年 / 19卷 / 02期

关键词：

D O I：

10.1016/0250-6874(89)87070-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：183 / 197

页数：15

共 27 条

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