ELECTRICAL CHARACTERIZATION OF OXYGEN IMPLANTED SILICON SUBSTRATES

[1] SUBTHRESHOLD CURRENTS IN CMOS TRANSISTORS MADE ON OXYGEN-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1983, 19 (17) : 684 - 685

[2] FOSTER DJ, 1983, SEP ESSDERC 83 CANT

[3] HEMMENT PLF, 1983, OXYGEN DEFECT DISTRI

[4] HEMMENT PLF, 1983, FORMATION BURIED INS, P157

[5] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 744 - 751

[6] EFFECTS OF IMPLANTATION TEMPERATURE ON THE PROPERTIES OF BURIED OXIDE LAYERS IN SILICON FORMED BY OXYGEN ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 57 - 59

[7] FORMATION OF SIO2 FILMS BY OXYGEN-ION BOMBARDMENT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (08) : 737 - &

[1] SUBTHRESHOLD CURRENTS IN CMOS TRANSISTORS MADE ON OXYGEN-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1983, 19 (17) : 684 - 685

[2] FOSTER DJ, 1983, SEP ESSDERC 83 CANT

[3] HEMMENT PLF, 1983, OXYGEN DEFECT DISTRI

[4] HEMMENT PLF, 1983, FORMATION BURIED INS, P157

[5] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05): : 744 - 751

[6] EFFECTS OF IMPLANTATION TEMPERATURE ON THE PROPERTIES OF BURIED OXIDE LAYERS IN SILICON FORMED BY OXYGEN ION-IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 57 - 59

[7] FORMATION OF SIO2 FILMS BY OXYGEN-ION BOMBARDMENT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (08) : 737 - &