THE EFFECT OF AN INTERFACIAL P-N-JUNCTION ON THE ELECTROCHEMICAL PASSIVATION OF SILICON IN AQUEOUS ETHYLENEDIAMINE-PYROCATECHOL

被引:9
作者
GEALER, RL
KARSTEN, HK
WARD, SM
机构
关键词
D O I
10.1149/1.2095916
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1180 / 1183
页数:4
相关论文
共 25 条
[1]   SODIUM-HYDROXIDE SOLUTION SHOWS SELECTIVE ETCHING OF BORON-DOPED SILICON [J].
BARYCKA, I ;
TETERYCZ, H ;
ZNAMIROWSKI, Z .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :345-346
[2]  
BASSOUS E, 1975, Patent No. 3921916
[4]   INTEGRATED SIGNAL CONDITIONING FOR SILICON PRESSURE SENSORS [J].
BORKY, JM ;
WISE, KD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1906-1910
[5]  
CHAU HL, 1985, INT C SOLID STATE SE, P174
[6]   PRESSURE SENSITIVITY IN ANISOTROPICALLY ETCHED THIN-DIAPHRAGM PRESSURE SENSORS [J].
CLARK, SK ;
WISE, KD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1887-1896
[7]  
FAUST JW, 1983, J ELECTROCHEM SOC, V130, P1413, DOI 10.1149/1.2119964
[8]   BIAS-DEPENDENT ETCHING OF SILICON IN AQUEOUS KOH [J].
GLEMBOCKI, OJ ;
STAHLBUSH, RE ;
TOMKIEWICZ, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :145-151
[9]  
HIRATA M, 1985, INT C SOLID STATE SE, P287
[10]   AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES [J].
JACKSON, TN ;
TISCHLER, MA ;
WISE, KD .
ELECTRON DEVICE LETTERS, 1981, 2 (02) :44-45