DC AND AC CONDUCTIVITY IN HOPPING ELECTRONIC SYSTEMS

被引:247
作者
HILL, RM
JONSCHER, AK
机构
[1] Chelsea College, University of London, London, SW6 5PR, Pulton Place
关键词
D O I
10.1016/0022-3093(79)90064-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The various theories of dc and ac conductivity in materials with hopping electronic charge carriers are critically examined in the light of the available experimental evidence. The temperature dependence of the dc conductivity suggests that in most materials the transition from nearest-neighbour hopping to variable-range hopping has been observed. However the theory in this region is insufficiently developed to enable meaningful determinations of the relevant parameters to be made from experimental data. The situation with ac theory is even less satisfactory, none of the existing theories being capable of accounting adequately for the observed behaviour. Neglect of many-body interactions and of the effect of the dielectric lattice, in addition to that of the charge carriers, are seen as the principal shortcomings. It follows, then, that the question of any relationship between the dc and ac conductivities cannot be answered at present, because of the lack of reliable data and because of insufficient theoretical understanding of the carrier processes in question. © 1979.
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收藏
页码:53 / 69
页数:17
相关论文
共 69 条
[1]   AC CONDUCTIVITY AND AC PHOTOCONDUCTIVITY IN AMORPHOUS AND CRYSTALLINE INSULATORS [J].
ABKOWITZ, M ;
LAKATOS, A ;
SCHER, H .
PHYSICAL REVIEW B, 1974, 9 (04) :1813-1822
[2]   DARK AND PHOTOGENERATED AC CONDUCTIVITY IN AS2S3 SINGLE-CRYSTALS [J].
ABKOWITZ, M ;
BLOSSEY, DF ;
LAKATOS, AI .
PHYSICAL REVIEW B, 1975, 12 (08) :3400-3407
[3]  
ABKOWITZ M, 1976, COMMUN PHYS, V1, P175
[4]   ELECTRICAL CONDUCTION IN AMORPHOUS CARBON [J].
ADKINS, CJ ;
FREAKE, SM ;
HAMILTON, EM .
PHILOSOPHICAL MAGAZINE, 1970, 22 (175) :183-&
[5]   ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J].
ALLEN, FR ;
ADKINS, CJ .
PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1027-&
[6]   POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS [J].
AUSTIN, IG ;
MOTT, NF .
ADVANCES IN PHYSICS, 1969, 18 (71) :41-+
[7]  
Banus MD, 1970, CHEM EXTENDED DEFECT, P488
[8]   INSITU THERMOELECTRIC-POWER MEASUREMENTS OF UHV DEPOSITED AMORPHOUS SILICON [J].
BEYER, W ;
STUKE, J .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02) :K155-K158
[9]   HOPPING CONDUCTIVITY IN ORDERED AND DISORDERED SOLIDS .1. [J].
BOTTGER, H ;
BRYKSIN, VV .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 78 (01) :9-56
[10]  
Brodsky A.H., 1972, J NONCRYST SOLIDES, V8, P739, DOI [10.1016/0022-3093(72)90221-9, DOI 10.1016/0022-3093(72)90221-9]