SULFIDE PASSIVATION OF GAAS - STUDY OF SURFACE BAND BENDING

被引：4

作者：

BERKOVITS, VL

BESSOLOV, VN

LVOVA, TV

MAKARENKO, IV

SAFAROV, VI

TSARENKOV, BV

机构：

[1] A. F. Ioffe Physico-Technical Institute

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90146-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical and scanning tunnelling microscopy (STM) methods are used to characterize the electronic properties of sulphide-passivated GaAs surfaces. The optical technique makes it possible to follow the Fermi level movement on the surface in situ, the sample being immersed in sulphide solution. STM provides data on the thickness and electronic properties of the passivating coverage.

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页码：43 / 46

页数：4

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