CHEMICAL-VAPOR-DEPOSITION OF COPPER OR SILVER FROM THE PRECURSORS [M(HFAC)(C-NME)][M=CU, AG, HFAC=CF3C(O)CHC(O)CF3]

The new complexes [M(hfac)(C drop NMe)], where hfac=CF3C(O)CHC(O)CF3 and M=Cu or Ag, are good precursors for the chemical vapour deposition (CVD) of thin films of copper or silver. The complex with M=Ag has been characterized by an X-ray structure determination to be monomeric with distorted trigonal planar coordination at silver(I). Thermal CVD of silver can be carried out at 320 degrees C to give silver films with carbon and oxygen impurities. Pure silver films can be obtained at 250 degrees C by thermal CVD in the presence of hydrogen.