DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON-MICROSCOPY

被引：29

作者：

COCKAYNE, DJH

HONS, A

机构：

来源：

JOURNAL DE PHYSIQUE | 1979年 / 40卷

关键词：

D O I：

10.1051/jphyscol:1979603

中图分类号：

学科分类号：

摘要：

引用

页码：11 / 18

页数：8

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[41] WEAK-BEAM ELECTRON-MICROSCOPY OF FAULTED DIPOLES IN DEFORMED SILICON
WINTER, AT
MAHAJAN, S
BRASEN, D
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (03): : 315 - 326
[42] STUDY OF GUINIER-PRESTON ZONES IN ALUMINUM-COPPER ALLOYS USING WEAK-BEAM TECHNIQUE OF ELECTRON-MICROSCOPY
YOSHIDA, H
COCKAYNE, DJH
WHELAN, MJ
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (01): : 89 - 100