ANDREEV-REFLECTION IN HIGHLY DOPED PB/N-INSB/PB JUNCTIONS

被引：5

作者：

FISCHER, G

KECK, K

机构：

[1] Physikalisches Institut, Universität Würzburg, Würzburg, D-97074, Am Hubland

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1993年 / 92卷 / 02期

关键词：

D O I：

10.1007/BF01312175

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We studied the carrier transport through n-InSb-films sandwiched between two superconducting lead electrodes. These n-InSb-films were about 30 nm thick, polycrystalline and very highly doped (10(21) cm-3). The V(I)- and dV/dI (V)-characteristics indicated all the properties of Andreev-reflection (subharmonic energy-gap structures (SGS) and excess current) according to the theory of Octavio et al. (OTBK-model) [1, 2]. Our measurements show the temperature dependence of these structures and also the influence of magnetic fields up to 80 mT and give a further reference to the importance of Andreev-reflection in semiconductor-coupled superconducting junctions (SSmS junctions).

引用

页码：187 / 190

页数：4

共 8 条

[1] TRANSITION FROM METALLIC TO TUNNELING REGIMES IN SUPERCONDUCTING MICRO-CONSTRICTIONS - EXCESS CURRENT, CHARGE IMBALANCE, AND SUPER-CURRENT CONVERSION [J].