SOME GENERAL RELATIONSHIPS FOR FLICKER NOISE IN MOSFETS

被引：8

作者：

VANDERZIEL, A

机构：

[1] Electrical Engineering Department, University of Minnesota, Minneapolis

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 04期

关键词：

D O I：

10.1016/0038-1101(78)90327-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general relationship is derived for the spectral intensity Stg(f) of flicker noise in MOSFETs caused by fluctuations δN in the number of carriers in a section Δx of the channel. Various previous theories follow as special cases. If the device is uniform, the noise intensity at arbitrary drain bias Vd can be expressed in terms of the noise intensity for Vd {reversed tilde equals} 0. © 1978.

引用

页码：623 / 624

页数：2

共 5 条

[1]

KATTO H, 1977, JUL S 1F FLUCT

[2]

KLAASSEN FM, 1967, PHILIPS RES REP, V22, P505

[3] INFLUENCE OF HOT CARRIER EFFECTS ON THERMAL NOISE OF FIELD-EFFECT TRANSISTORS [J].