INFLUENCE OF HOT CARRIER EFFECTS ON THERMAL NOISE OF FIELD-EFFECT TRANSISTORS

[1] BRUNCKE WC, 1966, IEEE T ELECTRON DEVI, VED13, P323

[2] UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08): : 970 - 979

[3] NOISE TEMPERATURE OF HOT ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (07) : 280 - &

[4] FROHMANBENTCHKO.D, 1969, IEEE T, VED16, P108

[5] HOFSTEIN SR, 1965, IEEE T ELECTRON DEVI, VED12, P129

[6] ELECTRIC CURRENT SATURATION IN A JUNCTION FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 829 - &

[7] KLAASSEN FM, 1967, PHILIPS RES REP, V22, P505

[8] KLAASSEN FM, 1970, IEEE T ELECTRON DEVI, VED17, P852

[9] KLAASSEN KM, 1967, IEEE T ELECTRON DEV, VED14, P368

[10] THEORY OF INFLUENCE OF HOT ELECTRON EFFECTS ON INSULATED GATE FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 169 - &

[1] BRUNCKE WC, 1966, IEEE T ELECTRON DEVI, VED13, P323

[2] UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (08): : 970 - 979

[3] NOISE TEMPERATURE OF HOT ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (07) : 280 - &

[4] FROHMANBENTCHKO.D, 1969, IEEE T, VED16, P108

[5] HOFSTEIN SR, 1965, IEEE T ELECTRON DEVI, VED12, P129

[6] ELECTRIC CURRENT SATURATION IN A JUNCTION FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 829 - &

[7] KLAASSEN FM, 1967, PHILIPS RES REP, V22, P505

[8] KLAASSEN FM, 1970, IEEE T ELECTRON DEVI, VED17, P852

[9] KLAASSEN KM, 1967, IEEE T ELECTRON DEV, VED14, P368

[10] THEORY OF INFLUENCE OF HOT ELECTRON EFFECTS ON INSULATED GATE FIELD EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 169 - &