ELECTRIC CURRENT SATURATION IN A JUNCTION FIELD-EFFECT TRANSISTOR

[1] PHYSICAL PHENOMENON RESPONSIBLE FOR SATURATION CURRENT IN FIELD EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1963, 6 (01) : 65 - 67

[2] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[3] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[4] SOUTHWALL RV, 1940, RELAXATION METHODS E

[5] THEORY OF THE FLOW OF ELECTRONS AND HOLES IN GERMANIUM AND OTHER SEMICONDUCTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04): : 560 - 607

[6] YAMASHITA J, 1960, PROGRESS SEMICONDUCT, V4, P63

[1] PHYSICAL PHENOMENON RESPONSIBLE FOR SATURATION CURRENT IN FIELD EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1963, 6 (01) : 65 - 67

[2] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[3] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1365 - 1376

[4] SOUTHWALL RV, 1940, RELAXATION METHODS E

[5] THEORY OF THE FLOW OF ELECTRONS AND HOLES IN GERMANIUM AND OTHER SEMICONDUCTORS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04): : 560 - 607

[6] YAMASHITA J, 1960, PROGRESS SEMICONDUCT, V4, P63