SIMULATIONS AND EXPERIMENTS OF MODE-LOCKING OF SEMICONDUCTOR-LASERS - PULSE EVOLUTION, FREQUENCY DETUNING, AND BIAS DEPENDENCE

被引:3
作者
BLIXT, P
KROTKUS, A
机构
[1] Department of Physics II, Royal Institute of Technology, Stockholm
关键词
D O I
10.1007/BF02189506
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Simulations of a mode-locked diode laser based on a travelling-wave rate-equation model have been compared with experiments. The pulse measurement technique involved a conventional intensity autocorrelator together with an internally generated second-harmonic emission measurement set-up. The latter is ideal for systematic relative measurements. For the first time, pulse evolution as a function of the number of round-trips was measured. Short optical pulses were obtained after approximately 40 round-trips. The experimental and simulated detuning range was about 1 MHz and the d.c. bias dependence was investigated. © 1990 Chapman and Hall Ltd.
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页码:561 / 570
页数:10
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