DIRECT MEASUREMENT OF THE EFFECTIVE-MASS RENORMALIZATION IN N-TYPE MODULATION-DOPED AL0.23GA0.77AS/IN0.08GA0.92AS/GAAS QUANTUM-WELLS

被引：6

作者：

ADAMS, S ^{[1
]}

GALBRAITH, I ^{[1
]}

MURDIN, BN ^{[1
]}

MITCHELL, KW ^{[1
]}

CAVENETT, BC ^{[1
]}

PIDGEON, CR ^{[1
]}

KIRBY, PB ^{[1
]}

SMITH, RS ^{[1
]}

MILLER, B ^{[1
]}

机构：

[1] GEC MARCONI MAT TECHNOL LTD,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.46.13611

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have made the first direct measurement of the electron effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells. The technique takes advantage of the presence, in such asymmetric structures, of parity-allowed optical transitions between the two lowest conduction subbands and the lowest valence subband. We have found that the electron mass is enhanced by 17% in a well with a sheet carrier concentration of 1.25 X 10(12) CM-2.

引用

页码：13611 / 13614

页数：4

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