SILICON HALL-EFFECT POWER ICS FOR BRUSHLESS MOTORS

被引：16

作者：

KANDA, Y ^{[1
]}

MIGITAKA, M ^{[1
]}

YAMAMOTO, H ^{[1
]}

MOROZUMI, H ^{[1
]}

OKABE, T ^{[1
]}

OKAZAKI, S ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 01期

关键词：

D O I：

10.1109/T-ED.1982.20673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：151 / 154

页数：4

相关论文

共 6 条

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[2] EFFECT OF MECHANICAL-STRESS ON OFFSET VOLTAGES OF HALL DEVICES IN SI IC
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[3] DESIGN CONSIDERATION FOR HALL DEVICES IN SI IC
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : K41 - K44
[4] A GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON
KANDA, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 64 - 70
[5] MAYER JW, 1970, ION IMPLANTATION SEM, P224
[6] YOUNGS MODULUS SHEAR MODULUS AND POISSONS RATIO IN SILICON AND GERMANIUM
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