THE ROLE OF SILICON SELF-INTERSTITIALS IN THE FORMATION OF THERMALLY INDUCED ROD-LIKE DEFECTS IN CZ SILICON

被引：22

作者：

REICHE, M

BREITENSTEIN, O

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 101卷 / 02期

关键词：

D O I：

10.1002/pssa.2211010242

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K97 / &

共 9 条

[1] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].

BOURRET, A ;

THIBAULTDESSEAUX, J ;

SEIDMAN, DN .

[2]

BOURRET A, 1987, IN PRESS I PHYS C SE

[3]

BOURRET A, 1986, MATER RES SOC S P, V59, P223

[4]

EBERITZSCH J, 1981, THESIS U HALLE

[5]

NITZSCHE W, 1986, THESIS U LEIPZIG

[6]

OEHRLEIN GS, 1984, 13TH P INT C DEF SEM, P701

[7]

REICHE M, 1986, 4TH P S PHYS GRUNDL

[8]

REICHE M, 1987, 2ND INT SCH GETT DEF

[9]

WENK HR, 1978, 9TH P INT C EL MICR, V3, P404