SPATIAL-ANALYSIS OF ELECTRONIC NOISE IN SUBMICRON SEMICONDUCTOR STRUCTURES

We present an original method to investigate electronic noise in semiconductor structures by providing a spatial analysis of the-spectral density of voltage fluctuations under constant-current conditions. Monte Carlo simulations performed for submicron n+nn+ structures of Si and GaAs show that at equilibrium most of the low-frequency noise originates from the n-region while at increasing voltages relevant contributions come from the hot electrons which penetrate the drain region.