MONTE-CARLO ANALYSIS OF THE TRANSIENT SPECTRAL DENSITY OF VELOCITY FLUCTUATIONS IN SEMICONDUCTORS

被引：8

作者：

GONZALEZ SANCHEZ, T

PEREZ, JEV

CONDE, PMG

COLLANTES, DP

机构：

[1] Departamento de Física Aplicada, Facultad de Ciencias, Universidad de Salamanca

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multiparticular Monte Carlo method has been developed to calculate the spectral density of velocity fluctuations in transient conditions, when the electric field applied to a semiconductor changes. This method has been employed in the study of an instantaneous change in the electric field from 1 to 25 kV/cm in N-type GaAs. The results obtained are interpreted in terms of the phenomena occurring during the transient. The evolution of the transient spectral density for long times was found to converge at the steady state one of the final field.

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页码：613 / 615

页数：3

相关论文

共 17 条

[1] MONTE-CARLO CALCULATIONS OF DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN N-TYPE GAAS [J].

ABE, M ;

YANAGISAWA, S ;

WADA, O ;

TAKANASHI, H .

APPLIED PHYSICS LETTERS, 1974, 25 (11) :674-675

[2] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS [J].

BRENNAN, K ;

HESS, K .

SOLID-STATE ELECTRONICS, 1984, 27 (04) :347-357

[3] DIAGONAL AND OFF-DIAGONAL CONTRIBUTIONS TO AUTO-CORRELATION OF VELOCITY FLUCTUATIONS IN SEMICONDUCTORS [J].

BRUNETTI, R ;

JACOBONI, C .

PHYSICAL REVIEW LETTERS, 1983, 50 (15) :1164-1167

[4] ANALYSIS OF THE STATIONARY AND TRANSIENT AUTO-CORRELATION FUNCTION IN SEMICONDUCTORS [J].

BRUNETTI, R ;

JACOBONI, C .

PHYSICAL REVIEW B, 1984, 29 (10) :5739-5748

[5] DIFFUSION AND THE POWER SPECTRAL DENSITY AND CORRELATION-FUNCTION OF VELOCITY FLUCTUATION FOR ELECTRONS IN SI AND GAAS BY MONTE-CARLO METHODS [J].

FAUQUEMBERGUE, R ;

ZIMMERMANN, J ;

KASZYNSKI, A ;

CONSTANT, E ;

MICROONDES, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1065-1071

[6] GENERALIZED DIFFUSION, MOBILITY, AND THE VELOCITY AUTO-CORRELATION FUNCTION FOR HIGH-FIELD TRANSPORT IN SEMICONDUCTORS [J].

FERRY, DK ;

BARKER, JR .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :818-824

[7]

GONZALEZ SANCHEZ T, 1991, SEMICOND SCI TECH, V6, P862, DOI 10.1088/0268-1242/6/9/005

[8] DIFFUSION AND THE POWER SPECTRAL DENSITY OF VELOCITY FLUCTUATIONS FOR ELECTRONS IN INP BY MONTE-CARLO METHODS [J].

HILL, G ;

ROBSON, PN ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :356-360

[9] CORRELATION-FUNCTIONS AND ELECTRONIC NOISE IN DOPED SEMICONDUCTORS [J].

KUHN, T ;

REGGIANI, L ;

VARANI, L .

PHYSICAL REVIEW B, 1990, 42 (17) :11133-11146

[10] A MODEL CURRENT SPECTRAL DENSITY FOR HOT-CARRIER NOISE IN SEMICONDUCTORS [J].

KUHN, T ;

REGGIANI, L ;

VARANI, L .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) :7097-7101