共 13 条
- [2] ALBERIGI.A, 1973, APPL PHYS LETT, V22, P103, DOI 10.1063/1.1654567
- [3] COMPARISON OF HOT ELECTRON DIFFUSION RATES FOR GAAS AND INP [J]. ELECTRONICS LETTERS, 1973, 9 (19) : 460 - 461
- [4] HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 278 - 280
- [6] CALCULATION OF HOT ELECTRON DIFFUSION RATE FOR GAAS [J]. PHYSICS LETTERS A, 1969, A 29 (10) : 578 - &
- [7] HIGH-FIELD TRANSPORT IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (09): : 1641 - 1654
- [8] FAWCETT W, 1973, NON OHMIC TRANSPORT, P531
- [9] DIFFUSION OF HOT-ELECTRONS IN N INDIUM PHOSPHIDE [J]. ELECTRONICS LETTERS, 1973, 9 (01) : 9 - 10
- [10] HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4414 - +