RAMAN STUDIES OF INTRASUBBAND PLASMONS IN LATERALLY MODULATED 2-DIMENSIONAL ELECTRON GASES

被引：6

作者：

OSUILLEABHAIN, LC

HUGHES, HP

BANGERT, D

CHURCHILL, AC

GRIMSHAW, MP

RITCHIE, DA

JONES, GAC

机构：

[1] Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE, Madingley Road

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.50.14161

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an inelastic light-scattering study of the intrasubband plasmons of a single two-dimensional electron gas (2DEG) at a GaAs/AlxGa1-xAs heterointerface under a grating Schottky gate with a period comparable to the plasmon wavelength. Gaps appear in the plasmon dispersion relation because of the spatially periodic screening by the gate, and these are successfully modeled using a scattering matrix calculation of the electromagnetic response of the system. Biasing the gate periodically modulates the 2DEG carrier density, and has a striking effect on the plasmon dispersion relation that cannot be fully explained within the existing theoretical framework. © 1994 The American Physical Society.

引用

页码：14161 / 14165

页数：5

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