GAAS POWER MESFETS - DESIGN, FABRICATION, AND PERFORMANCE

被引:38
作者
DILORENZO, JV [1 ]
WISSEMAN, WR [1 ]
机构
[1] TEXAS INSTRUMENTS INC,ADV COMPONENTS LAB,ADV MICROWAVE COMPONENTS BRANCH,DALLAS,TX 75222
关键词
D O I
10.1109/TMTT.1979.1129635
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reviews the state of the art of power GaAs MESFET's. Items that will be covered are the operating principles of the device from a material and geometric point of view, the design, fabrication sequences, and material structures used by various laboratories, the factors identified as important to power by workers in the field, the performance of the device in terms of frequency effects, power per unit gate-width effects, scaling from small to large gate-width devices, and voltage effects. In addition, the circuit applications of GaAs FET's will be briefly discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:367 / 378
页数:12
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