LASER-INDUCED CHEMICAL ETCHING OF SILICON IN CHLORINE ATMOSPHERE .3. COMBINED CW AND PULSED IRRADIATION

被引：40

作者：

KULLMER, R

BAUERLE, D

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 47卷 / 04期

关键词：

D O I：

10.1007/BF00615502

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：377 / 386

页数：10

共 15 条

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[6] KINETICS OF FORMATION OF ELECTRONICALLY-EXCITED CL-2, BRCL AND BR-2 IN THE RECOMBINATION OF GROUND-STATE HALOGEN ATOMS
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[7] RECOMBINATION OF GROUND STATE HALOGEN ATOMS .2. KINETICS OF OVERALL RECOMBINATION OF CHLORINE ATOMS
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[8] LASER-INDUCED FLUORESCENCE STUDIES - B-X TRANSITION OF CL2 .3. COLLISIONAL ENERGY-TRANSFER RATES IN THE BETA-3PI(0-U(+)) STATE OF C-12
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[9] AFTERGLOWS
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[10] EXCIMER-LASER ETCHING ON SILICON
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NAKASE, M
OKANO, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (04): : 313 - 322

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