MOLECULAR-BEAM EPITAXY OF ZN1-XCDXSE EPILAYERS AND ZNSE/ZN1-XCDXSE SUPERLATTICES

被引：142

作者：

SAMARTH, N

LUO, H

FURDYNA, JK

ALONSO, RG

LEE, YR

RAMDAS, AK

QADRI, SB

OTSUKA, N

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] PURDUE UNIV,DEPT MAT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the epitaxial growth of Zn1-x Cd xSe epilayers and ZnSe/Zn1-x CdxSe superlattices (0≤x≤1) on (100)GaAs. Although thick epilayers of Zn 1-x CdxSe are prone to defect formation with increasing Cd content, the structural and optical characteristics improve remarkably when Zn1-x CdxSe is in the form of thin layers within ZnSe/Zn1-x CdxSe superlattices. High quality superlattices can be grown for x≤0.35. The characterization of these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and photoluminescence is reported.

引用

页码：1163 / 1165

页数：3

共 5 条

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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (26) : 2680 - 2682

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