GROWTH OF CUBIC (ZINC BLENDE) CDSE BY MOLECULAR-BEAM EPITAXY

被引:183
作者
SAMARTH, N
LUO, H
FURDYNA, JK
QADRI, SB
LEE, YR
RAMDAS, AK
OTSUKA, N
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907
[3] PURDUE UNIV,DEPT MAT ENGN,W LAFAYETTE,IN 47907
关键词
D O I
10.1063/1.101033
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2680 / 2682
页数:3
相关论文
共 9 条
[1]   WIDE GAP II-VI-SUPERLATTICES OF ZNSE-ZN1-XMNXSE [J].
KOLODZIEJSKI, LA ;
GUNSHOR, RL ;
BONSETT, TC ;
VENKATASUBRAMANIAN, R ;
DATTA, S ;
BYLSMA, RB ;
BECKER, WM ;
OTSUKA, N .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :169-171
[2]   PIEZOMODULATED AND PHOTOMODULATED REFLECTIVITY SPECTRA OF ZNSE/GAAS AND CDTE/INSB EPILAYERS [J].
LEE, YR ;
RAMDAS, AK ;
KOLODZIEJSKI, LA ;
GUNSHOR, RL .
PHYSICAL REVIEW B, 1988, 38 (18) :13143-13149
[3]   ENERGY-GAP, EXCITONIC, AND INTERNAL MN2+ OPTICAL-TRANSITION IN MN-BASED II-VI DILUTED MAGNETIC SEMICONDUCTORS [J].
LEE, YR ;
RAMDAS, AK ;
AGGARWAL, RL .
PHYSICAL REVIEW B, 1988, 38 (15) :10600-10610
[4]   GROWTH AND OPTICAL PROPERTIES OF WURTZITE AND SPHALERITE CDSE EPITAXIAL THIN FILMS [J].
LUDEKE, R ;
PAUL, W .
PHYSICA STATUS SOLIDI, 1967, 23 (01) :413-&
[5]   HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES [J].
OTSUKA, N ;
KOLODZIEJSKI, LA ;
GUNSHOR, RL ;
DATTA, S ;
BICKNELL, RN ;
SCHETZINA, JF .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :860-862
[6]   STRUCTURAL CHARACTERIZATION OF GAAS/ZNSE INTERFACES [J].
TAMARGO, MC ;
DEMIGUEL, JL ;
HWANG, DM ;
FARRELL, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :784-787
[7]   ACCEPTOR LEVELS IN GALLIUM-ARSENIDE [J].
WHITE, AM ;
DEAN, PJ ;
ASHEN, DJ ;
MULLIN, JB ;
WEBB, M ;
DAY, B ;
GREENE, PD .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (11) :L243-L246
[8]  
YAO T, 1983, TECHNOLOGY PHYSICS M, P313
[9]  
1986, JCPDS19191 INT CTR D, P77