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ELECTRON-MOBILITY AND ROUGHNESS SCATTERING IN POTENTIAL INSERTED QUANTUM WELLS (PI-QWS)

被引：9
作者：
NODA, T
TANAKA, M
SAKAKI, H
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90351-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：60 / 63
页数：4
相关论文
共 5 条
[1]   INTERFACE ROUGHNESS IN ALAS/GAAS QUANTUM WELLS CHARACTERIZED BY THE MOBILITY OF TWO-DIMENSIONAL ELECTRONS [J].
HIRAKAWA, K ;
NODA, T ;
SAKAKI, H .
SURFACE SCIENCE, 1988, 196 (1-3) :365-366
[2]   INTERFACE ROUGHNESS SCATTERING IN GAAS/ALAS QUANTUM-WELLS [J].
SAKAKI, H ;
NODA, T ;
HIRAKAWA, K ;
TANAKA, M ;
MATSUSUE, T .
APPLIED PHYSICS LETTERS, 1987, 51 (23) :1934-1936
[3]   ATOMISTIC MODELS OF INTERFACE STRUCTURES OF GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS GROWN BY INTERRUPTED AND UNINTERRUPTED MBE [J].
TANAKA, M ;
SAKAKI, H .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :153-158
[4]   ATOMIC-SCALE STRUCTURES OF TOP AND BOTTOM HETEROINTERFACES IN GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS PREPARED BY MOLECULAR-BEAM EPITAXY WITH GROWTH INTERRUPTION [J].
TANAKA, M ;
SAKAKI, H ;
YOSHINO, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L155-L158
[5]   A NEW HIGH-ELECTRON MOBILITY MONOLAYER SUPERLATTICE [J].
YAO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L680-L682
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