ELECTROMIGRATION OF METALLIC ISLANDS ON THE SI(001) SURFACE

被引：32

作者：

ICHINOKAWA, T

IZUMI, H

HAGINOYA, C

ITOH, H

机构：

[1] Department of Applied Physics, Waseda University, Shinjuku-ku, Tokyo, 169

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.47.9654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electromigration of metallic islands formed by vapor deposition on a Si(001)2 X 1 surface has been investigated with an ultrahigh-vacuum scanning electron microscope by heating the Si substrate at temperatures higher than the melting points of the islands while passing a direct current through the Si substrate. The direction of the island migration depends on the type of metal. The speed is approximately proportional to the island radius and decreases exponentially with inverse temperature. The activation energy for the migration of Au islands is 0.75 eV. The driving force of the island migration is discussed.

引用

页码：9654 / 9657

页数：4

共 14 条

[1] THERMAL DIFFUSION IN CRYSTALLINE SOLIDS [J].