C-60 ADSORPTION ON THE SI(100)2X1 AND CU(111)1X1 SURFACES

被引:27
作者
HASHIZUME, T
SAKURAI, T
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期
关键词
D O I
10.1116/1.587687
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The adsorption of C60 molecules on the Si(100)2X1 and Cu(111)1X1 surfaces has been investigated by field ion-scanning tunneling microscopy/spectroscopy. The C60 molecules are stable on the Si(100)2X1 surfaces without rotation at room temperature because of the strong bonding with Si dangling bonds. On the Cu(111) 1X1 surface, segregation of individual C60 molecules to the terrace edges and two-dimensional island growth of C60 toward the upper terrace are observed. Bias voltage-dependent scanning tunneling microscopy images of the individual C60 of the monolayer film show unique intramolecular structures, which are interpreted as the local density of the states of C60 interacting with the substrate.
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页码:1992 / 1999
页数:8
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