INTERBAND-TRANSITIONS IN CDTE/ZNTE SINGLE QUANTUM-WELLS GROWN BY TEMPERATURE-GRADIENT VAPOR-DEPOSITION

被引：6

作者：

LEE, JH ^{[1
]}

LEE, SD ^{[1
]}

PARK, HL ^{[1
]}

KIM, TW ^{[1
]}

机构：

[1] KWANGWOON UNIV,DEPT PHYS,SEOUL 139701,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interband transitions of CdTe/ZnTe strained single quantum wells grown on GaAs substrates by double-well temperature-gradient vapor-transport deposition (DWTGVTD) were presented. The (E1-HH1) excitonic transitions were examined by low-temperature photoluminescence (PL), and their energies increased with decreasing CdTe well widths. In addition, the interband transition energies were determined taking into consideration strain effects. The results for the computed (E1-HH1) transition energies were found consistent with the experimental values. The sharp PL spectra below tc implied that the single quantum wells grown by DWTGVTD had a high caliber in comparison to those grown by MBE and had high-quality heterointerfaces.

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页码：3194 / 3196

页数：3

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