NEW AMORPHOUS ALLOY SEMICONDUCTORS - ALPHA-SI1-XSNX

被引:19
作者
VERIE, C
ROCHETTE, JF
REBOUILLAT, JP
机构
[1] CNRS,PHYS SOLIDE ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE
[2] CNRS,LAB LOUIS NEEL,F-38042 GRENOBLE,FRANCE
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词
D O I
10.1051/jphyscol:19814147
中图分类号
学科分类号
摘要
引用
收藏
页码:667 / 669
页数:3
相关论文
共 6 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]   RELATIVISTIC CORRECTIONS TO BAND STRUCTURE OF TETRAHEDRALLY BONDED SEMICONDUCTORS [J].
HERMAN, F ;
KUGLIN, CD ;
CUFF, KF ;
KORTUM, RL .
PHYSICAL REVIEW LETTERS, 1963, 11 (12) :541-&
[3]  
Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X
[4]  
ROCHETTE JF, 1981, THESIS ORSAY
[5]  
TEMKIN RJ, 1972, SOLID STATE COMMUN, V11, P1591, DOI 10.1016/0038-1098(72)90525-X
[6]  
Verie C., 1973, New Developments in semiconductors, P511