POINT DEFECTS IN VANADIUM

被引：23

作者：

PEREPEZK.JH

MURPHY, RF

JOHNSON, AA

机构：

[1] Department of Physical and Engineering Metallurgy, Polytechnic Institute of Brooklyn, Brooklyn, NY

[2] Edgar C. Bain Laboratory, U.S. Steel Corp., Monroeville, PA

[3] Bettis Atomic Power Laboratory, Westinghouse Electric Corp., West Mifflin, PA

来源：

PHILOSOPHICAL MAGAZINE | 1969年 / 19卷 / 157期

关键词：

D O I：

10.1080/14786436908217756

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

After either plastic deformation or fast neutron irradiation, electron beam zone-refined vanadium exhibits an electrical resistivity recovery peak at about 170°C. The activation enthalpy associated with the peak, which is approximately 0·8 ev, is significantly different to the activation enthalpies for the diffusion of carbon, nitrogen, oxygen and hydrogen in vanadium. Thus it is concluded that the peak is probably due to the annihilation of some species of lattice point defect rather than to the redistribution of interstitial impurity atoms. © 1969 Taylor & Francis Group, LLC.

引用

页码：1 / &

共 7 条

[1] INTERNAL FRICTION IN VANADIUM-HYDROGEN SYSTEM [J].