ACTIVATION-ENERGY FOR SURFACE-DIFFUSION OF SI ON SI(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY

被引：654

作者：

MO, YW ^{[1
]}

KLEINER, J ^{[1
]}

WEBB, MB ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,MADISON,WI 53706

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.66.1998

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The migration of Si on Si(001) has been investigated by analyzing the number density of islands formed during deposition using scanning tunneling microscopy. The activation energy and prefactor for diffusion in the fast direction, which is along the surface dimer rows, are found to be 0.67 +/- 0.08 eV and approximately 10(-3) cm2/sec, respectively.

引用

页码：1998 / 2001

页数：4

共 18 条

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