CHANNELING OF 20-800-KEV ARSENIC IONS IN THE [110] AND THE [100] DIRECTIONS OF SILICON, AND THE ROLES OF ELECTRONIC AND NUCLEAR STOPPING

被引：19

作者：

WILSON, RG

机构：

来源：

关键词：

D O I：

10.1063/1.329205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3985 / 3988

页数：4

共 7 条

[1] CHANNELED-ION IMPLANTATION OF GROUP-III AND GROUP-V IONS INTO SILICON
FURUYA, T
NISHI, H
INADA, T
SAKURAI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3918 - 3921
[2] SLOWING-DOWN OF IONS
LINDHARD, J
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 311 (1504): : 11 - &
[3] LINDHARD J, 1963, MAT FYS MEDDR, V33
[4] POATE JM, 1973, CHANNELLING THEORY O, pCH4
[5] REDDI VGK, 1972, SOLID STATE TECH OCT
[6] WHITTON JL, 1973, CHANNELLING, pCH8
[7] WILSON RG, 1978, NBS40049 SPEC PUBL