OXIDATION PROCESS OF HYDROGEN TERMINATED SILICON SURFACE STUDIED BY THERMAL-DESORPTION SPECTROSCOPY

被引：40

作者：

YABUMOTO, N ^{[1
]}

SAITO, K ^{[1
]}

MORITA, M ^{[1
]}

OHMI, T ^{[1
]}

机构：

[1] TOHOKU UNIV, FAC ENGN, AOBA KU, SENDAI, MIYAGI 980, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 3B期

关键词：

SILICON; SURFACE; OXIDATION; HF CLEANING; HYDROGEN; OXYGEN; WATER; THERMAL DESORPTION SPECTROSCOPY;

D O I：

10.1143/JJAP.30.L419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation process of hydrogen terminated silicon surface is investigated by thermal desorption spectroscopy (TDS). Oxidation proceeds by two steps, at about 500-degrees-C and 800-degrees-C, by the desorption of hydrogen and the consumption of oxygen and water. Oxygen and water are consumed simultaneously, but water consumption does not change with oxygen supply. The oxidation process changes by the presence of the native oxide.

引用

页码：L419 / L422

页数：4

共 11 条

[1] DETERMINATION OF TRANSMISSION CHARACTERISTICS IN MASS FILTERS [J].

EHLERT, TC .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1970, 3 (03) :237-&

[2] ADSORPTION STATES AND ADSORPTION-KINETICS OF ATOMIC-HYDROGEN ON SILICON CRYSTAL-SURFACES [J].

FROITZHEIM, H ;

KOHLER, U ;

LAMMERING, H .

SURFACE SCIENCE, 1985, 149 (2-3) :537-557

[3] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J].

IBACH, H ;

BRUCHMANN, HD ;

WAGNER, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03) :113-124

[4] ADSORPTION OF ATOMIC OXYGEN (N2O) ON A CLEAN SI(100) SURFACE AND ITS INFLUENCE ON THE SURFACE-STATE DENSITY - A COMPARISON WITH O-2 [J].

KEIM, EG ;

WOLTERBEEK, L ;

VANSILFHOUT, A .

SURFACE SCIENCE, 1987, 180 (2-3) :565-598

[5] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&

[6] INTEGRATED THERMAL CHEMICAL VAPOR-DEPOSITION PROCESSING FOR SI TECHNOLOGY [J].

LIEHR, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1939-1946

[7] GROWTH OF NATIVE OXIDE ON A SILICON SURFACE [J].

MORITA, M ;

OHMI, T ;

HASEGAWA, E ;

KAWAKAMI, M ;

OHWADA, M .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) :1272-1281

[8] MONOHYDRIDE AND DIHYDRIDE FORMATION AT SI(100) 2X1 - A HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY STUDY [J].

STUCKI, F ;

SCHAEFER, JA ;

ANDERSON, JR ;

LAPEYRE, GJ ;

GOPEL, W .

SOLID STATE COMMUNICATIONS, 1983, 47 (10) :795-801

[9] INITIAL-STAGE OF THERMAL-OXIDATION OF THE SI(111)-(7X7) SURFACE [J].

TABE, M ;

CHIANG, TT ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1986, 34 (04) :2706-2717

[10] THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING [J].

TAKAHAGI, T ;

NAGAI, I ;

ISHITANI, A ;

KURODA, H ;

NAGASAWA, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3516-3521

← 1 2 →