REDUCTION IN SIDEWALL RECOMBINATION VELOCITY BY SELECTIVE DISORDERING IN GAAS/ALGAAS QUANTUM-WELL MESA STRUCTURES

被引：13

作者：

HAMAO, N

SUGIMOTO, M

KOHMOTO, S

YOKOYAMA, H

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.105296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sidewall recombination in SiO2-capped GaAs/AlGaAs multiple quantum well mesa structures is investigated using a time-resolved photoluminescence technique. Nonradiative recombination lifetimes in annealed samples are improved significantly compared with those in samples which are not annealed. This effect contributes to a reduction in sidewall recombination velocity due to disordering of quantum wells at the sidewall by cap annealing. Numerical analysis is used to fit the experimentally observed sample size dependence of the nonradiative lifetimes to calculated curves. This shows that the effective sidewall recombination velocity is reduced from 8 X 10(6) to 4 X 10(4) cm/s.

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页码：1488 / 1490

页数：3

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