TIME-RESOLVED INVESTIGATIONS OF SIDEWALL RECOMBINATION IN DRY-ETCHED GAAS WIRES

被引：59

作者：

MAYER, G

MAILE, BE

GERMANN, R

FORCHEL, A

GRAMBOW, P

MEIER, HP

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

[2] IBM CORP,RES DIV,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期

关键词：

D O I：

10.1063/1.103003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the sidewall recombination in dry-etched GaAs/GaAlAs wires with widths between 12 μm and 300 nm using picosecond spectroscopy. The wires were fabricated with electron beam lithography and different reactive ion etching processes. The excitonic lifetimes decrease strongly with decreasing wire widths due to sidewall recombination. Using a model calculation to fit the experimentally observed width dependence of the lifetimes the surface recombination velocity is determined to be S=2×106 cm/s at 50 K. S increases with temperature and is independent of the etching process.

引用

页码：2016 / 2018

页数：3

共 10 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].