TIME RESOLVED SPECTROSCOPY ON ETCHED GAAS/GAALAS-QUANTUM-MICROSTRUCTURES

被引:17
作者
MAYER, G [1 ]
MAILE, BE [1 ]
GERMANN, R [1 ]
FORCHEL, A [1 ]
MEIER, HP [1 ]
机构
[1] IBM CORP,RES CTR,CH-8803 RUSCHLIKON,SWITZERLAND
关键词
D O I
10.1016/0749-6036(89)90389-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:579 / 582
页数:4
相关论文
共 8 条
  • [1] EVIDENCE FOR LOW SURFACE RECOMBINATION VELOCITY ON N-TYPE INP
    CASEY, HC
    BUEHLER, E
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 247 - 249
  • [2] 10-NM LINEWIDTH ELECTRON-BEAM LITHOGRAPHY ON GAAS
    CRAIGHEAD, HG
    HOWARD, RE
    JACKEL, LD
    MANKIEWICH, PM
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 38 - 40
  • [3] Crank J., 1979, MATH DIFFUSION
  • [4] FORCHEL A, 1988, 5TH P INT WINT NEW D
  • [5] HOWARD RE, 1982, VLSI ELECTRONICS MIC, V5
  • [6] FABRICATION OF NANOMETER WIDTH GaAs/AlGaAs AND InGaAs/InP QUANTUM WIRES.
    Maile, B.E.
    Forchel, A.
    German, R.
    Menschig, A.
    Streubel, K.
    Scholz, F.
    Weimann, G.
    Schlapp, W.
    [J]. Microelectronic Engineering, 1987, 6 (1-4) : 163 - 168
  • [7] MAILE BE, IN PRESS J VACCUM B
  • [8] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION
    SANDROFF, CJ
    NOTTENBURG, RN
    BISCHOFF, JC
    BHAT, R
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 33 - 35