SYNTHESIS OF SIO2 THIN-FILMS BY REACTIVE EXCIMER LASER ABLATION

被引：13

作者：

FOGARASSY, E

SLAOUI, A

FUCHS, C

STOQUERT, JP

机构：

[1] Laboratoire PHASE (UPR du CNRS n 292), Centre de Recherches Nucléaires (IN2P3), 67037 Strasbourg Cedex

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90041-U

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon oxide films are deposited by laser ablation from silicon, silicon monoxide and fused silica targets, performed under vacuum and in oxygen atmosphere, with a high power pulsed ArF (lambda = 193 nm) excimer laser. The specific influence of oxygen in the chamber during the laser processing on the synthesis of stoichiometric SiO2 films is demonstrated.

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页码：180 / 186

页数：7

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