ENERGY-DEPENDENCE OF THE NERNST-ETTINGSHAUSEN EFFECT INDUCED BY PULSED-LASER LIGHT IN BISMUTH-FILMS

被引：3

作者：

BALMASEDA, MS ^{[1
]}

DESANDE, JCG ^{[1
]}

PEREZ, JMG ^{[1
]}

机构：

[1] UNIV COMPLUTENSE MADRID,FAC CIENCIAS FIS,DEPT OPT,E-28040 MADRID,SPAIN

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.50.14561

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The behavior with the irradiation energy and with the magnetic field of the thermomagnetic response induced by laser pulses in 5.5-μm Bi films at room temperature is reported in this paper. The Nernst-Ettingshausen coefficient at an applied magnetic field of 1 T is estimated: QNE1.0×10-5 V/T K. A good agreement is found when these results are compared with those reported earlier in polycrystalline bulk samples obtained by a conventional method. This supports the reliability of the pulsed laser technique in the measurement of weak transport effects and indicates that the optically pumped carriers hardly influence the transport properties of bismuth. © 1994 The American Physical Society.

引用

页码：14561 / 14564

页数：4

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