LASER-INDUCED TRANSVERSE THERMOELECTRIC POTENTIAL IN BISMUTH-FILMS - EVIDENCE FOR OPTICAL-PUMPING TO A METASTABLE BAND

被引:4
作者
DESANDE, JCG
SANCHEZBALMASEDA, M
PEREZ, JMG
机构
[1] UNIV COMPLUTENSE, DEPT FIS APPLICADA ELECT & ELECTR 3, E-28040 MADRID, SPAIN
[2] UNIV COMPLUTENSE, FAC CIENCIAS FIS, E-28040 MADRID, SPAIN
关键词
D O I
10.1103/PhysRevB.47.9844
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A model is developed to explain the temporal evolution of the laser-induced transverse thermoelectrical response in bismuth films. The effect is studied with a 1.064-mum laser and with a 10.6-mum laser. The qualitative difference of the film response to each wavelength is evidence of the existence of a metastable band in bismuth. Its energy is almost-equal-to 0.58 eV and its recombination rate is lower than 2 x 10(7) S-1.
引用
收藏
页码:9844 / 9848
页数:5
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