FERROELECTRIC GATE TRANSISTORS

被引：21

作者：

RABSON, TA

ROST, TA

LIN, H

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX

[2] UNIV HOUSTON,CTR SPACE VACUUM EPITAXY,HOUSTON,TX 77204

[3] UNIV HOUSTON,TEXAS CTR SUPERCONDUCT,HOUSTON,TX 77204

来源：

INTEGRATED FERROELECTRICS | 1995年 / 6卷 / 1-4期

关键词：

D O I：

10.1080/10584589508019350

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of a field effect transistor with a lithium niobate gate insulator are reported. Shifts in the gate characteristics consistent with polarization switching have been observed. Comparisons with the results of some of the recently published theoretical models for ferroelectric gate transistors are made. Advantages and disadvantages of buffer layers in the gate structure are also discussed.

引用

页码：15 / 22

页数：8

共 8 条

[1]

BAUMANN RC, 1990, MATER RES SOC SYMP P, V200, P31, DOI 10.1557/PROC-200-31

[2] PULSED LASER DEPOSITION AND FERROELECTRIC CHARACTERIZATION OF BISMUTH TITANATE FILMS [J].