PHOTOREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF CUALXGA1-XSE2 ALLOYS

被引：26

作者：

SHIRAKATA, S ^{[1
]}

CHICHIBU, S ^{[1
]}

SUDO, R ^{[1
]}

OGAWA, A ^{[1
]}

MATSUMOTO, S ^{[1
]}

ISOMURA, S ^{[1
]}

机构：

[1] KEIO UNIV, FAC SCI & TECHNOL, YOKOHAMA, KANAGAWA 223, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 9B期

关键词：

SINGLE CRYSTALS OF CUALXGA1-XSE2; CHALCOPYRITE SEMICONDUCTORS; PHOTOLUMINESCENCE; PHOTOREFLECTANCE; MODULATION SPECTROSCOPY;

D O I：

10.1143/JJAP.32.L1304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance (PR) and photoluminescence (PL) measurements have been carried out at 77 K on single crystals of CuAlxGa1-xSe2 alloys grown by the chemical vapor transport method. Energies of excitons associated with uppermost valence bands have been determined as a function of composition based on the analysis of PR spectra. Spin-orbit and crystal field splittings have been obtained. PL spectra exhibited an exciton-related line, a peak due to free-to-acceptor transition and a deep level emission band. These PL lines and peaks are discussed in terms of the compositional dependence of the exciton energy.

引用

页码：L1304 / L1307

页数：4

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