MULTIPLE-SCATTERING AND THE 200 REFLECTION IN SILICON AND GERMANIUM

被引：24

作者：

TISCHLER, JZ

BUDAI, JD

ICE, GE

HABENSCHUSS, A

机构：

[1] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37831

[2] OAK RIDGE ASSOC UNIV,OAK RIDGE,TN 37830

来源：

ACTA CRYSTALLOGRAPHICA SECTION A | 1988年 / 44卷

关键词：

D O I：

10.1107/S0108767387008006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：22 / 25

页数：4

共 8 条

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[4]

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[6] A NEW APPROACH TO MULTIBEAM X-RAY-DIFFRACTION USING PERTURBATION-THEORY OF SCATTERING [J].

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ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 :525-533

[7] DETERMINATION OF MAGNITUDE, PHASE, AND TEMPERATURE-DEPENDENCE OF FORBIDDEN REFLECTIONS IN SILICON AND GERMANIUM [J].

TISCHLER, JZ ;

BATTERMAN, BW .

PHYSICAL REVIEW B, 1984, 30 (12) :7060-7066

[8] DETERMINATION OF PHASE USING MULTIPLE-BEAM EFFECTS [J].

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ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 :510-514

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