TIME BEHAVIOR OF LASER MODES IN GAAS PLATELET LASERS

被引：3

作者：

KEUNE, DL

ROSSI, JA

HOLONYAK, N

DAPKUS, PD

机构：

[1] Department of Electrical Engineering, Materials Research Laboratory, University of Illinois, Urbana

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 04期

关键词：

D O I：

10.1063/1.1657869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uniformly doped GaAs platelet lasers (77°K) are studied on a time basis and are shown to lase without significant delay. Data are presented showing that the turn-on time and wavelength of longer wavelength laser modes are controlled by electron-hole pair density and not the usual impurity effects. © 1969 The American Institute of Physics.

引用

页码：1934 / &

共 4 条

[1] DELAY OF STIMULATED EMISSION IN GAAS LASER DIODES NEAR ROOM TEMPERATURE [J].