ADDENDUM TO IMPACT IONIZATION OF EXCITONS IN GAAS

被引：4

作者：

BLUDAU, W

WAGNER, E

LAGOIS, J

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.18.4550

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：4550 / 4551

页数：2

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[1] HOT-ELECTRONS AND EXCITON-ELECTRON COLLISION IN GAAS UNDER EXTERNAL ELECTRIC-FIELD
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[2] Wannier Exciton in an electric field. I. Optical absorption by bound and continuum states
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[3] IMPACT IONIZATION OF EXCITONS IN GAAS
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[4] INFLUENCE OF EXCITON IMPACT IONIZATION AND ILLUMINATION INTENSITY ON THE EXCITON-POLARITON REFLECTANCE OF GAAS
LAGOIS, J
WAGNER, E
BLUDAU, W
LOSCH, K
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4325 - 4331
[5] IMPACT IONIZATION BREAKDOWN OF N-TYPE EPITAXIAL GAAS AT LIQUID HELIUM TEMPERATURES
REYNOLDS, RA
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (04) : 385 - &