EMITTER DEGRADATION BY AVALANCHE BREAKDOWN IN PLANAR TRANSISTORS

被引:16
作者
VERWEY, JF
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10.1016/S0038-1101(71)80002-3
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:775 / +
页数:1
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共 22 条
[1]   HFE DEGRADATION DUE TO REVERSE BIAS EMITTER-BASE JUNCTION STRESS [J].
COLLINS, DR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) :403-&
[2]   OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].
DEAL, BE ;
GROVE, AS ;
SNOW, EH ;
SAH, CT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&
[3]  
GRAAFF HCD, 1970, PHILIPS RES REP, V25, P21
[4]   EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J].
GROVE, AS ;
LEISTIKO, O ;
HOOPER, WW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) :157-+
[5]  
GROVE AS, 1964, APPL PHYS, V35, P2695
[6]  
GROVE AS, 1967, PHYS TECHNOL S, P75
[7]   AVALANCHE DRIFT INSTABILITY IN PLANAR PASSIVATED P-N JUNCTIONS [J].
GURTLER, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :980-+
[8]  
KATO T, 1964, JPN J APPL PHYS, V3, P377
[9]  
KOOI E, 1967, SURFACE PROPERTIES O
[10]  
KURZ B, 1967, 6 P ANN REL PHYS S, P47