KELVIN PROBE AND SYNCHROTRON RADIATION STUDY OF SURFACE PHOTOVOLTAGE AND BAND BENDING AT METAL GAAS (100) INTERFACES

被引：17

作者：

MAO, D

KAHN, A

LELAY, G

MARSI, M

HWU, Y

MARGARITONDO, G

机构：

[1] CTR RECH MECAN CROISSANCE CRISTALLINE,CNRS,MARSEILLE,FRANCE

[2] UNIV AIX MARSEILLE 1,F-13331 MARSEILLE 3,FRANCE

[3] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[4] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

[5] ECOLE POLYTECH FED ECUBLENS,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0169-4332(92)90227-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.

引用

页码：142 / 150

页数：9

共 27 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL GAP(110) INTERFACES - TEMPERATURE-DEPENDENT FERMI LEVEL MOVEMENT [J].

ALONSO, M ;

CIMINO, R ;

HORN, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :891-897

[2] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].

ALONSO, M ;

CIMINO, R ;

HORN, K .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1947-1950

[3] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].

CAO, R ;

MIYANO, K ;

KENDELEWICZ, T ;

CHIN, KK ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002

[4] PHOTOEMISSION-STUDY ON NONEQUILIBRIUM EFFECTS IN METALS ON GAAS(110) [J].

CIMINO, R ;

GIARANTE, A ;

ALONSO, M ;

HORN, K .

APPLIED SURFACE SCIENCE, 1992, 56-8 :151-159

[5] PHOTOEMISSION-BASED PHOTOVOLTAGE PROBE OF SEMICONDUCTOR SURFACE AND INTERFACE ELECTRONIC-STRUCTURE [J].

DEMUTH, JE ;

THOMPSON, WJ ;

DINARDO, NJ ;

IMBIHL, R .

PHYSICAL REVIEW LETTERS, 1986, 56 (13) :1408-1411

[6] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].

DRATHEN, P ;

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1978, 77 (01) :L162-L166

[7] PHOTOVOLTAIC EFFECTS IN PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION [J].

HECHT, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :1018-1024

[8] ROLE OF PHOTOCURRENT IN LOW-TEMPERATURE PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION [J].

HECHT, MH .

PHYSICAL REVIEW B, 1990, 41 (11) :7918-7921

[9]

Kahn A., 1989, Metallization and Metal-Semiconductor Interfaces. Proceedings of a NATO Advanced Research Workshop, P163

[10] HIGH-RESOLUTION SYNCHROTRON-RADIATION CORE-LEVEL SPECTROSCOPY OF DECAPPED GAAS(100) SURFACES [J].

LELAY, G ;

MAO, D ;

KAHN, A ;

HWU, Y ;

MARGARITONDO, G .

PHYSICAL REVIEW B, 1991, 43 (17) :14301-14304

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