HETEROEPITAXIAL GROWTH OF C-AXIS-ORIENTED BATIO3 THIN-FILMS WITH AN ATOMICALLY SMOOTH SURFACE

被引：38

作者：

GONG, JP ^{[1
]}

KAWASAKI, M ^{[1
]}

FUJITO, K ^{[1
]}

TANAKA, U ^{[1
]}

ISHIZAWA, N ^{[1
]}

YOSHIMOTO, M ^{[1
]}

KOINUMA, H ^{[1
]}

KUMAGAI, M ^{[1
]}

HIRAI, K ^{[1
]}

HORIGUCHI, K ^{[1
]}

机构：

[1] KANAGAWA HIGH TECHNOL FDN,MAT CHARACTERIZAT LAB,TAKATSU KU,KAWASAKI 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 5A期

关键词：

BATIO3; PULSED LASER DEPOSITION; HETEROEPITAXY; ATOMICALLY SMOOTH SURFACE; RBS; AFM; INSULATING LAYER; SIS TUNNEL JUNCTION;

D O I：

10.1143/JJAP.32.L687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-axis-oriented barium titanate (BaTiO3) epitaxial films with an atomically smooth surface have been fabricated on SrTiO3 {100} substrates using the pulsed laser deposition technique. The crystal structure and epitaxial orientation of the films have been analyzed by means of 2theta/theta X-ray diffractometry and 4-circle X-ray diffractometry, The highly oriented and epitaxial crystallinity is also shown by means of Rutherford backscattering spectrometry which gave a chi(min) of 1.7%. The atomically smooth surface comparable to that of the SrTiO3 substrate is revealed by means of atomic force microscopy. The breakdown electric field of the BaTiO3 film is as high as 10(6) V/cm.

引用

页码：L687 / L689

页数：3

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