METALORGANIC CHEMICAL VAPOR-DEPOSITION OF BATIO3 FILMS ON MGO(100)

被引:50
作者
NAKAZAWA, H [1 ]
YAMANE, H [1 ]
HIRAI, T [1 ]
机构
[1] ASAHI CHEM IND CO LTD,CORP RES LABS,KAWASAKI LAB,KAWASAKI KU,KAWASAKI 210,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期
关键词
THIN FILM; CVD; BATIO3; BETA-DIKETONE CHELATE; EPITAXIAL GROWTH; A-AXIS ORIENTATION; DIELECTRIC CONSTANT;
D O I
10.1143/JJAP.30.2200
中图分类号
O59 [应用物理学];
学科分类号
摘要
BaTiO3 thin films were prepared on MgO(100) substrates by chemical vapor deposition using barium beta-diketonate {Ba(C11H19O2)2} and titanium tetraisopropoxide {Ti[OCH(CH3)2]4} as metalorganic precursors. BaTiO3 films deposited at 800-1000-degrees-C showed prominent a-axis orientation perpendicular to the substrate surface. The deposition rate of these films was 1.0-1.2-mu-m/h. The rocking curve of BaTiO3(200) reflection from the film deposited at 800-degrees-C indicated strong crystallographic orientation. The epitaxial relationship between the film and the substrate was found by X-ray pole figure analysis. The relative dielectric constant of a polycrystalline BaTiO3 film prepared on a Pt(100)/MgO(100) substrate at 800-degrees-C was 1040 (10 kHz, 20 V/cm).
引用
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页码:2200 / 2203
页数:4
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